View STB8NM60D_6054469.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

february 2006 rev2 1/13 13 high dv/dt and avalanche capabilities 100% avalanche rated low input capacitance and gate charge low gate input resistance fast internal recovery diode description the fdmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters applications the mdmesh? family is very suitable for increasing power density of high voltage converters allowing syst em miniaturization and higher efficiencies. internal schematic diagram general features type v dss r ds(on) i d p tot STB8NM60D stp8nm60d 600v 600v < 1.0 ? < 1.0 ? 8a 8a 100w 100w 1 2 3 1 3 to-220 d2pak STB8NM60D stp8nm60d n-channel 600v - 0.9 ? - 8a - to-220/d 2 pak fast diode mdmesh? power mosfet www.st.com order codes sales type marking package packaging STB8NM60D b8nm60d d2pak tape & reel stp8nm60d p8nm60d to-220 tube www.datasheet.in
electrical ratings STB8NM60D - stp8nm60d 2/13 rev2 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20k ? )600v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25c 8 a i d drain current (continuous) at t c =100c 5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 32 a p tot total dissipation at t c = 25c 100 w derating factor 0.8 w/c dv/dt (2) 2. i sd 5a, di/dt 400a/s, v dd =80% v (br)dss peak diode recovery voltage slope 20 v/ns t j t stg operating junction temperature storage temperature -65 to 150 c table 2. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.25 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 3. avalanche data symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by tjmax) 2.5 a e as single pulse avalanche energy (starting tj=25c, i d =i ar , v dd =50v) 200 mj www.datasheet.in
STB8NM60D - stp8nm60d electrical characteristics rev2 3/13 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test condictions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc=125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 30v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d =2.5a 0.9 1 ? table 5. dynamic symbol parameter test condictions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =i d(on) x r ds(on)max i d = 2.5a 2.4 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 380 170 14 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent ouput capacitance v gs =0, v ds =0v to 480v 60 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400v, i d = 5a v gs =10v (see figure 13) 15 4 8 18 nc nc nc www.datasheet.in
electrical characteristics STB8NM60D - stp8nm60d 4/13 rev2 table 6. switching times symbol parameter test condictions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =300v, i d =2.5a, r g =4.7 ?, v gs =10v (see figure 12) 13 10 26 8 ns ns ns ns t d(off) t f t c turn-off delay time fall time cross-over time v dd =480v, i d =5a, r g =4.7 ?, v gs =10v (see figure 12) 8 8 14 ns ns ns table 7. source drain diode symbol parameter test condictions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 5 20 a a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =5a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =5a, di/dt = 100a/s, v dd =50 v, tj=25c 107 330 6 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =5a, di/dt = 100a/s, v dd =50 v, tj=150c 178 640 7 ns nc a www.datasheet.in
STB8NM60D - stp8nm60d electrical characteristics rev2 5/13 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance www.datasheet.in
electrical characteristics STB8NM60D - stp8nm60d 6/13 rev2 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics www.datasheet.in
STB8NM60D - stp8nm60d test circuit rev2 7/13 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive waveform figure 17. switching time waveform www.datasheet.in
package mechanical data STB8NM60D - stp8nm60d 8/13 rev2 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com www.datasheet.in
STB8NM60D - stp8nm60d package mechanical data rev2 9/13 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data www.datasheet.in
package mechanical data STB8NM60D - stp8nm60d 10/13 rev2 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3 www.datasheet.in
STB8NM60D - stp8nm60d packaging mechanical data rev2 11/13 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data www.datasheet.in
revision history STB8NM60D - stp8nm60d 12/13 rev2 6 revision history table 8. document revision history date revision changes 13-jan-2006 1 initial release. 15-feb-2006 2 modified description on first page www.datasheet.in
STB8NM60D - stp8nm60d revision history rev2 13/13 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subjec t t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are no t authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com www.datasheet.in

▲Up To Search▲

Price & Availability of STB8NM60D

	To Download STB8NM60D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .